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 FFPF04S60S 4 A, 600 V, STEALTH? II Diode www.fairchildsemi.com 2 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit VF1 IF = 4 A IF = 4 A TC = 25oC TC = 125oC - - 2.2 1.7 2.6 - V IR1 VR = 6 00 V VR = 6 00 V TC = 25oC TC = 125oC - - - - 100 500 μA trr IF = 1 A, di/dt = 100 A/μs, VR = 30 V TC = 25oC - 16 23 ns trr Irr S factor Qrr IF = 4 A, di/dt = 200 A/μs, VR = 390 V TC = 25oC - - - - 18 2 0.7 18 25 - - - ns A nC trr Irr S factor Qrr IF = 4 A, di/dt = 200 A/μs, VR = 390 V TC = 125oC - - - - 45 2.8 1.8 64 - - - - ns A nC WAVL Avalanche Energy ( L = 40 mH) 10 - - mJ Test Circuit and Waveforms Notes: 1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2% ?2007 Fairchild Semiconductor Corporation FFPF04S60S Rev. A |